† Corresponding author. E-mail:
Project supported by the National Natural Science Foundation of China (Grant No. 51572219), the Natural Science Foundation of Shaanxi Province, China (Grant No. 2015JM1018), the Graduate Innovation Fund of Northwest University of China (Grant No. YJG15007), the Henan Provincial Foundation and Frontier Technology Research Program, China (Grant Nos. 2013JCYJ12 and 2013JCYJ13), the Fund from Henan University of Technology, China (Grant No. 2014YWQN08), and the Natural Science Fund from the Henan Provincial Education Department, China (Grant No. 16A140027).
The structural, electronic, and elastic properties of cubic HC(NH2)2PbI3 perovskite are investigated by density functional theory using the Tkatchenko–Scheffler pairwise dispersion scheme. Our relaxed lattice parameters are in agreement with experimental data. The hydrogen bonding between NH2 and I ions is found to have a crucial role in FAPbI3 stability. The first calculated band structure shows that HC(NH2)2PbI3 has a direct bandgap (1.02 eV) at R-point, lower than the bandgap (1.53 eV) of CH3NH3PbI3. The calculated density of states reveals that the strong hybridization of s(Pb)– p(I) orbital in valence band maximum plays an important role in the structural stability. The photo-generated effective electron mass and hole mass at R-point along the R–Γ and R–M directions are estimated to be smaller:
Methylammonium lead trihalide perovskite CH3NH3Pbl3 (MAPbl3) or MAPbl3-based photovoltaic solar cells have demonstrated recorded power conversion efficiency (PCE) as high as 21.0%.[1] The superb photovoltaic performances of MAPbl3 originate from its high absorption coefficient, good electrical transport properties, and favorable band gap (1.55 eV).[2–5] However, at solar cell operating temperature (> 300 K), MAPbl3 will undergo reversible structure phase transition, causing its band structure to change,[5] which can importantly affect the photovoltaic properties. The better thermal stability and low-band gap of perovskites are required in order to further improve the PCE.
In recent investigations, formamidinium-based perovskite HC(NH2)2PbI3 (FAPbI3) solar cells have come into being as a promising alternative to MAPbl3-based perovskite solar cells,[6–11] due to the better thermal stability, lower bandgap, and wider absorption range.[6,11] In 2014, Lee et al. reported that FAPbI3 coupled with a mesoporous TiO2 layer reached about 16% PCE via a two-step deposition procedure.[11] In 2015, a maximum PCE as high as 20.1% from solar cells based on FAPbI3 was demonstrated.[12] In 2016, Bi et al. reported that the PCE reached 20.6% by using FAPbI3 as an absorption layer.[13] Despite the rapid increase in FAPbI3 the solar cell efficiency is related to the device evolution. However, most of the fundamental physical properties of FAPbI3 have not yet been well studied.
According to the previous research,[14] dry crystals of black FAPbI3 (α-phase) are found to be converted into β-phase below 200 K and γ-phase below 130 K, which indicates that the α-phase has excellent stability above room temperature. The black α-phase of FAPbI3 perovskite was found to possess a cubic perovskite unit cell in high resolution neutron powder diffraction experiment in 2015.[15] The α-phase is the necessary and most important phase for the FAPbI3 perovskite solar cell application. However, the electronic and elastic properties of α-FAPbI3 have not yet been well investigated. Hence, it is necessary to investigate the structural, electronic and elastic properties of cubic FAPbI3 by first-principles studies.
The density function theory (DFT) calculations are performed by using the Vienna ab initio simulation package (VASP) code.[16] The projector augmented-wave (PAW) pseudopotentials[17] are used with an energy cutoff of 500 eV for the plane-wave basis functions. Electronic orbitals 5d6s6p, 5s5p, 2s2p, 2s2p, and 1s are considered in valence for Pb, I, C, N, and H atoms, respectively. The Monkhorst–Pack scheme with a 4 × 4 × 4 k-mesh[18] is employed for structural and electronic calculations, 8 × 8 × 8 k-mesh is adopted for the elastic analysis. Further increasing the energy cutoff and k-points show little difference in result. All the structures considered in this study are relaxed with a conjugate-gradient algorithm until the energy on the atoms is less than 1.0 × 10−4 eV.
For the exchange–correlation functional, the generalized gradient approximation (GGA) of Perdew–Burke–Ernzerhof (PBE)[19] is used. The van der Waal’s interaction (vdW) between the organic cation and the inorganic ion is calculated by employing the Tkatchenko–Scheffler (TS) pairwise dispersion scheme.[20] Accordingly, the calculations incorporating TS-vdW are labelled by “PBE + TS” hereafter.
It has been shown in previous DFT calculations that certain molecular orientations can affect the corresponding Pb–I inorganic frame and thus change the stability of the material.[21] For the cubic MAPbI3 structure, we should note that there are three local minima when the MA dipole is aligned along the [100], [110], and [111] directions respectively.[22] Therefore, in order to analyze in detail the stability of FAPbI3, we consider the above three orientations of the FA dipole. The calculated total energies are −47.8562 eV ([100] orientation), −47.8137 eV ([110] orientation), and −47.7316 eV ([111] orientation) respectively, which shows that the cubic FAPbI3 structure with FA aligned along the [100] direction has the smallest total energy and is most stable.
The most stable relaxed cubic FAPbI3 structure is obtained by using the PBE + TS method and shown in Fig.
According to the relaxed cubic structure, we investigate the electronic properties of FAPbI3, which are shown in Figs.
Because the projected density of states (PDOS) and the total density of states (TDOS) provide an in-depth insight into the electronic properties.[25] The PDOS and TDOS for FAPbI3 are presented in Figs.
Considering the fact that the photoelectric activity of photovoltaic material FAPbI3 is related to the mobilities of photo-generated electrons and holes, the mobility of photo-excited carriers (electrons and holes) can be indirectly estimated by their effective mass. Here, we calculate the effective mass of electrons (
The crystallinity and stress state of the perovskite layer can strongly affect the absorption performances of perovskite solar cell, and the elastic properties of perovskite layer material contribute to revealing its strain, stress, fracture mechanics, and deformation. So it is necessary to analyze the elastic properties of perovskite in the system for practical applications.[30] To the best of our knowledge, the calculations of elastic properties for our FAPbI3 system have not been reported so far.
To investigate the elastic properties of the FAPbI3, it is critical to first analyze the stability of FAPbI3 at a finite temperature. Theoretically, the phase stability at finite temperature is determined by comparing the free energies of phases. The free energy (F) can be expressed as
The elastic properties describe the mechanic properties of materials under the strain. The elastic constants Cij are obtained by calculating the total energy as a function of volume conserving strains through using the Mehl method.[31] Only three independent elastic constants (C11, C12, and C44) are required in order to describe a cubic structure, and the parameterizations of three strains used to calculate three elastic constants of cubic are shown in Ref. [32] Our calculated three elastic constants are shown in Table
The Debye temperature θD is also closely related to the elastic properties. According to the calculated elastic constants, we can proceed with estimating the sound velocities and the θD from the following equation:[39]
The structural, electronic, and elastic properties of cubic HC(NH2)2PbI3 perovskite are studied by the first principle calculations using PBE + TS scheme. The optimized structure is in accordance with the experimental result. The main interaction between the organic cations and inorganic framework is through the ionic bonding between NH2 and I ions. The calculated bandgap of FAPbI3 at R point is smaller than that of MAPbI3, which accords with the experimental result. The further analyses of obtained TDOS and PDOS reveal that the VBM of an anti-bonding Pb s/I p combination is formed, while the CBM of empty Pb p orbitals is formed. We estimate the effective electron and hole mass values of photocarriers in FAPbI3 to be
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